AP0203GMT-L Todos los transistores

 

AP0203GMT-L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0203GMT-L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11.5 nS

Cossⓘ - Capacitancia de salida: 820 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm

Encapsulados: PMPAK5X6L

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AP0203GMT-L datasheet

 ..1. Size:311K  ape
ap0203gmt-l.pdf pdf_icon

AP0203GMT-L

AP0203GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D D Description D AP0203 series are from Advanced Power innovated design and silicon process technology to achieve

 4.1. Size:95K  ape
ap0203gmt-hf.pdf pdf_icon

AP0203GMT-L

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

 5.1. Size:192K  ape
ap0203gmt.pdf pdf_icon

AP0203GMT-L

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D AP0203 series are from Advanced Power innovated design and D silicon process technology to achieve

 9.1. Size:747K  ncepower
nceap020n10ll.pdf pdf_icon

AP0203GMT-L

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g

Otros transistores... AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , IRF9540N , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB .

 

 

 


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