AP0203GMT-L PDF and Equivalents Search

 

AP0203GMT-L Specs and Replacement

Type Designator: AP0203GMT-L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.5 nS

Cossⓘ - Output Capacitance: 820 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: PMPAK5X6L

AP0203GMT-L substitution

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AP0203GMT-L datasheet

 ..1. Size:311K  ape
ap0203gmt-l.pdf pdf_icon

AP0203GMT-L

AP0203GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D D Description D AP0203 series are from Advanced Power innovated design and silicon process technology to achieve ... See More ⇒

 4.1. Size:95K  ape
ap0203gmt-hf.pdf pdf_icon

AP0203GMT-L

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin... See More ⇒

 5.1. Size:192K  ape
ap0203gmt.pdf pdf_icon

AP0203GMT-L

AP0203GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155A G RoHS Compliant & Halogen-Free S D D Description D AP0203 series are from Advanced Power innovated design and D silicon process technology to achieve... See More ⇒

 9.1. Size:747K  ncepower
nceap020n10ll.pdf pdf_icon

AP0203GMT-L

NCEAP020N10LL http //www.ncepower.com NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =100V,I =330A DS D uniquely optimized to provide the most efficient high frequency R =1.5m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent g... See More ⇒

Detailed specifications: AP10TN004CMT, AP10N012MT, AP0904GMT, AP0704GMT, AP0504GMT, AP0203GMT, AP3N2R2MT-L, AP10TN008CMT-L, IRF9540N, AP3P7R0EP, AP3N4R0P, AP3N2R8P, AP3N1R8P, AP3N020P, AP3P7R0EI, AP3N4R0J, AP3P7R0EJB

Keywords - AP0203GMT-L MOSFET specs

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