AP0203GMT-L Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP0203GMT-L
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11.5 ns
Cossⓘ - Выходная емкость: 820 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: PMPAK5X6L
Аналог (замена) для AP0203GMT-L
AP0203GMT-L Datasheet (PDF)
ap0203gmt-l.pdf

AP0203GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP0203 series are from Advanced Power innovated design andsilicon process technology to achieve
ap0203gmt-hf.pdf

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switchin
ap0203gmt.pdf

AP0203GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 2.2m Low On-resistance ID 155AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP0203 series are from Advanced Power innovated design andDsilicon process technology to achieve
nceap020n10ll.pdf

NCEAP020N10LLhttp://www.ncepower.comNCE Automotive N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =100V,I =330ADS Duniquely optimized to provide the most efficient high frequencyR =1.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent g
Другие MOSFET... AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , IRF1010E , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB .
History: SQJ570EP | P0550ED



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