AP3P7R0EJB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3P7R0EJB
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 590 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
Paquete / Cubierta: TO251S
Búsqueda de reemplazo de AP3P7R0EJB MOSFET
AP3P7R0EJB Datasheet (PDF)
ap3p7r0ejb.pdf
AP3P7R0EJBHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achiev
ap3p7r0eh.pdf
AP3P7R0EHHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
ap3p7r0emt.pdf
AP3P7R0EMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75AG RoHS Compliant & Halogen-Free HBM ESD 2KVSDDescriptionDDAP3P7R0E series are from Advanced Power innovated design andDsilicon process technolo
ap3p7r0es.pdf
AP3P7R0ESHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 7mG Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KVSDescriptionAP3P7R0E series are from Advanced Power innovated design andsilicon process technology to achieve
Otros transistores... AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , SKD502T , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AP3P6R0S .
History: 8680A | SWF20N60K
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM615MNA | AGM615MN | AGM615D | AGM614MNA | AGM614MN | AGM614MBP-M1 | AGM614MBP | AGM614D | AGM614A-G | AGM612S | AGM612MNA | AGM612MN | AGM612MBQ | AGM612MBP | AGM612D | AGM612AP
Popular searches
2sc710 | 2sc968 | 2sd217 | bdw93c equivalent | cs7n60f | d613 transistor | fdmc8884 mosfet | k3569 mosfet equivalent

