AP3P7R0EJB PDF and Equivalents Search

 

AP3P7R0EJB Specs and Replacement

Type Designator: AP3P7R0EJB

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 140 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO251S

AP3P7R0EJB substitution

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AP3P7R0EJB datasheet

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 ap3p7r0ejb.pdf pdf_icon

AP3P7R0EJB

AP3P7R0EJB Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achiev... See More ⇒

 6.1. Size:205K  ape
 ap3p7r0eh.pdf pdf_icon

AP3P7R0EJB

AP3P7R0EH Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

 6.2. Size:163K  ape
 ap3p7r0emt.pdf pdf_icon

AP3P7R0EJB

AP3P7R0EMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m Fast Switching Characteristic ID -75A G RoHS Compliant & Halogen-Free HBM ESD 2KV S D Description D D AP3P7R0E series are from Advanced Power innovated design and D silicon process technolo... See More ⇒

 6.3. Size:177K  ape
 ap3p7r0es.pdf pdf_icon

AP3P7R0EJB

AP3P7R0ES Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 7m G Fast Switching Characteristic ID -75A RoHS Compliant & Halogen-Free HBM ESD 2KV S Description AP3P7R0E series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

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Detailed specifications: AP0203GMT-L, AP3P7R0EP, AP3N4R0P, AP3N2R8P, AP3N1R8P, AP3N020P, AP3P7R0EI, AP3N4R0J, SKD502T, AP3P7R0EH, AP3P050H, AP3P010H, AP3N4R5H, AP3N4R0H, AP3N2R8H, AP3P7R0ES, AP3P6R0S

Keywords - AP3P7R0EJB MOSFET specs

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