AP3P010H Todos los transistores

 

AP3P010H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3P010H

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 58 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 73 nS

Cossⓘ - Capacitancia de salida: 415 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO252

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AP3P010H datasheet

 ..1. Size:67K  ape
 ap3p010h.pdf pdf_icon

AP3P010H

AP3P010H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description G AP3P010 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes

 7.1. Size:137K  ape
 ap3p010yt.pdf pdf_icon

AP3P010H

AP3P010YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching,

 7.2. Size:162K  ape
 ap3p010amt.pdf pdf_icon

AP3P010H

AP3P010AMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free G S D Description D D AP3P010A series are from Advanced Power innovated design and D silicon process technology to achiev

 7.3. Size:186K  ape
 ap3p010m.pdf pdf_icon

AP3P010H

AP3P010M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3A G RoHS Compliant & Halogen-Free S Description D D AP3P010 series are from Advanced Power innovated design and silicon D D process technology to achieve t

MOSTRAR MÁS

Otros transistores... AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AON7410 , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y .

 

 

 

 

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