Справочник MOSFET. AP3P010H

 

AP3P010H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP3P010H
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 58 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 73 ns
   Cossⓘ - Выходная емкость: 415 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP3P010H

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3P010H Datasheet (PDF)

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ap3p010h.pdfpdf_icon

AP3P010H

AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 7.1. Size:137K  ape
ap3p010yt.pdfpdf_icon

AP3P010H

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

 7.2. Size:162K  ape
ap3p010amt.pdfpdf_icon

AP3P010H

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev

 7.3. Size:186K  ape
ap3p010m.pdfpdf_icon

AP3P010H

AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

Другие MOSFET... AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , RFP50N06 , AP3N4R5H , AP3N4R0H , AP3N2R8H , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y .

History: HTM035N03 | 2SK3079A

 

 
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