AP3P010H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3P010H
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 58 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 73 ns
Cossⓘ - Выходная емкость: 415 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO252
- подбор MOSFET транзистора по параметрам
AP3P010H Datasheet (PDF)
ap3p010h.pdf

AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes
ap3p010yt.pdf

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,
ap3p010amt.pdf

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev
ap3p010m.pdf

AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 2N60G | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | NDT453N | RU7550S | AUIRFZ34N
History: 2N60G | STP20NM60FP | 2N6760JANTXV | IRLML9301TRPBF | NDT453N | RU7550S | AUIRFZ34N



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