AP3P010H PDF and Equivalents Search

 

AP3P010H Specs and Replacement

Type Designator: AP3P010H

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

AP3P010H substitution

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AP3P010H datasheet

 ..1. Size:67K  ape
ap3p010h.pdf pdf_icon

AP3P010H

AP3P010H Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A G RoHS Compliant & Halogen-Free S Description G AP3P010 series are from Advanced Power innovated design and D S silicon process technology to achieve the lowes... See More ⇒

 7.1. Size:137K  ape
ap3p010yt.pdf pdf_icon

AP3P010H

AP3P010YT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS -30V D Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ... See More ⇒

 7.2. Size:162K  ape
ap3p010amt.pdf pdf_icon

AP3P010H

AP3P010AMT Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30V D Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free G S D Description D D AP3P010A series are from Advanced Power innovated design and D silicon process technology to achiev... See More ⇒

 7.3. Size:186K  ape
ap3p010m.pdf pdf_icon

AP3P010H

AP3P010M Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3A G RoHS Compliant & Halogen-Free S Description D D AP3P010 series are from Advanced Power innovated design and silicon D D process technology to achieve t... See More ⇒

Detailed specifications: AP3N2R8P, AP3N1R8P, AP3N020P, AP3P7R0EI, AP3N4R0J, AP3P7R0EJB, AP3P7R0EH, AP3P050H, AON7410, AP3N4R5H, AP3N4R0H, AP3N2R8H, AP3P7R0ES, AP3P6R0S, AP3N4R0S, AP3C010H, AP3A020Y

Keywords - AP3P010H MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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