AP30T10GI Todos los transistores

 

AP30T10GI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30T10GI

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO220F

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AP30T10GI datasheet

 ..1. Size:163K  ape
ap30t10gi.pdf pdf_icon

AP30T10GI

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achie

 0.1. Size:58K  ape
ap30t10gi-hf.pdf pdf_icon

AP30T10GI

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resis

 6.1. Size:59K  ape
ap30t10gs-hf.pdf pdf_icon

AP30T10GI

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 6.2. Size:181K  ape
ap30t10gm.pdf pdf_icon

AP30T10GI

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno

Otros transistores... AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , TK10A60D , AP30T10GH , AP30P10GH , AP2N050H , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J .

History: SK2300A | U105D | R6004JNX

 

 

 

 

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