AP30T10GI PDF and Equivalents Search

 

AP30T10GI Specs and Replacement

Type Designator: AP30T10GI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO220F

AP30T10GI substitution

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AP30T10GI datasheet

 ..1. Size:163K  ape
ap30t10gi.pdf pdf_icon

AP30T10GI

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description AP30T10 series are from Advanced Power innovated design and silicon process technology to achie... See More ⇒

 0.1. Size:58K  ape
ap30t10gi-hf.pdf pdf_icon

AP30T10GI

AP30T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower On-resistance RDS(ON) 55m RoHS Compliant & Halogen-Free ID 16A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resis... See More ⇒

 6.1. Size:59K  ape
ap30t10gs-hf.pdf pdf_icon

AP30T10GI

AP30T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 55m Fast Switching Characteristic ID 19A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized... See More ⇒

 6.2. Size:181K  ape
ap30t10gm.pdf pdf_icon

AP30T10GI

AP30T10GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D Lower Gate Charge RDS(ON) 55m D Fast Switching Characteristic ID3 4.5A G S S Halogen Free & RoHS Compliant S SO-8 D Description AP30T10 series are from Advanced Power innovated design and silicon process techno... See More ⇒

Detailed specifications: AP3P7R0ES, AP3P6R0S, AP3N4R0S, AP3C010H, AP3A020Y, AP3990S, AP3700Y, AP30T10GS, TK10A60D, AP30T10GH, AP30P10GH, AP2N050H, AP2910EC4, AP2904EC4, AP25N170I, AP20WN170P, AP20WN170J

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