AP30P10GH Todos los transistores

 

AP30P10GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP30P10GH

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: TO252

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AP30P10GH datasheet

 ..1. Size:185K  ape
ap30p10gh.pdf pdf_icon

AP30P10GH

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat

 0.1. Size:96K  ape
ap30p10gh-hf.pdf pdf_icon

AP30P10GH

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 6.1. Size:93K  ape
ap30p10gs.pdf pdf_icon

AP30P10GH

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 6.2. Size:94K  ape
ap30p10gs-hf.pdf pdf_icon

AP30P10GH

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

Otros transistores... AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH , BS170 , AP2N050H , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H .

History: BF256B | ME80N75T-G

 

 

 

 

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