AP30P10GH Todos los transistores

 

AP30P10GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30P10GH
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO252
 

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AP30P10GH Datasheet (PDF)

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 ap30p10gh.pdf pdf_icon

AP30P10GH

AP30P10GH-HFHalogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAP30P10 series are from Advanced Power innovat

 0.1. Size:96K  ape
 ap30p10gh-hf.pdf pdf_icon

AP30P10GH

AP30P10GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

 6.1. Size:93K  ape
 ap30p10gs.pdf pdf_icon

AP30P10GH

AP30P10GSRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 6.2. Size:94K  ape
 ap30p10gs-hf.pdf pdf_icon

AP30P10GH

AP30P10GS-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

MOSTRAR MÁS

Otros transistores... AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS , AP30T10GI , AP30T10GH , 18N50 , AP2N050H , AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H .

History: 6N65KG-TMS4-T | VBM165R10 | SRC65R1K3ES | 2SK241 | NCE8205A | 2SK947 | RHU003N03

 

 
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