AP30P10GH PDF and Equivalents Search

 

AP30P10GH Specs and Replacement

Type Designator: AP30P10GH

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

AP30P10GH substitution

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AP30P10GH datasheet

 ..1. Size:185K  ape
ap30p10gh.pdf pdf_icon

AP30P10GH

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description AP30P10 series are from Advanced Power innovat... See More ⇒

 0.1. Size:96K  ape
ap30p10gh-hf.pdf pdf_icon

AP30P10GH

AP30P10GH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

 6.1. Size:93K  ape
ap30p10gs.pdf pdf_icon

AP30P10GH

AP30P10GS RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

 6.2. Size:94K  ape
ap30p10gs-hf.pdf pdf_icon

AP30P10GH

AP30P10GS-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 80m Fast Switching Characteristic ID -25A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒

Detailed specifications: AP3N4R0S, AP3C010H, AP3A020Y, AP3990S, AP3700Y, AP30T10GS, AP30T10GI, AP30T10GH, BS170, AP2N050H, AP2910EC4, AP2904EC4, AP25N170I, AP20WN170P, AP20WN170J, AP20WN170I, AP20WN170H

Keywords - AP30P10GH MOSFET specs

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