AP10TN040P Todos los transistores

 

AP10TN040P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN040P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 31.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220

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AP10TN040P datasheet

 ..1. Size:202K  ape
ap10tn040p.pdf pdf_icon

AP10TN040P

AP10TN040P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 31.5A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN040 series from Advanced Power Power inn

 5.1. Size:203K  ape
ap10tn040h.pdf pdf_icon

AP10TN040P

AP10TN040H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 32.7A G RoHS Compliant & Halogen-Free S Description G AP10TN040 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 7.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN040P

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 7.2. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN040P

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

Otros transistores... AP13N50R , AP10TN9R0P , AP10TN6R0P , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H , IRF830 , AP10TN040H , AP10TN003S , AP10TN003R , AP10TN003P , AP10TN003I , AP10P230H , AP10P10GJ , AP10N9R0R .

History: PMEN2423S | ME60N03AS | SMG2328 | BSL211SP | ME60P06T | SUM110P06-07L

 

 

 

 

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