Справочник MOSFET. AP10TN040P

 

AP10TN040P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN040P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 89.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 31.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

AP10TN040P Datasheet (PDF)

 ..1. Size:202K  ape
ap10tn040p.pdfpdf_icon

AP10TN040P

AP10TN040PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 31.5AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN040 series from Advanced Power Power inn

 5.1. Size:203K  ape
ap10tn040h.pdfpdf_icon

AP10TN040P

AP10TN040HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 32.7AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN040 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 7.1. Size:163K  ape
ap10tn010cmt.pdfpdf_icon

AP10TN040P

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 7.2. Size:161K  ape
ap10tn004cmt.pdfpdf_icon

AP10TN040P

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SD8901CY | 2SK3926-01MR | 2SK3572-Z | TWE3139K | FDD7N25LZTM | STP5NA80FI | TMP4N80

 

 
Back to Top

 


 
.