Справочник MOSFET. AP10TN040P

 

AP10TN040P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN040P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 89.2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 31.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 45 ns
   Cossⓘ - Выходная емкость: 230 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP10TN040P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10TN040P Datasheet (PDF)

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 ap10tn040p.pdf pdf_icon

AP10TN040P

AP10TN040PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 31.5AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN040 series from Advanced Power Power inn

 5.1. Size:203K  ape
 ap10tn040h.pdf pdf_icon

AP10TN040P

AP10TN040HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 32.7AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN040 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

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 ap10tn010cmt.pdf pdf_icon

AP10TN040P

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 7.2. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN040P

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

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History: FQT1N60CTFWS | IXFX73N30Q

 

 
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