AP10TN040P PDF and Equivalents Search

 

AP10TN040P Specs and Replacement

Type Designator: AP10TN040P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO220

AP10TN040P substitution

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AP10TN040P datasheet

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 ap10tn040p.pdf pdf_icon

AP10TN040P

AP10TN040P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 31.5A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN040 series from Advanced Power Power inn... See More ⇒

 5.1. Size:203K  ape
 ap10tn040h.pdf pdf_icon

AP10TN040P

AP10TN040H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 32.7A G RoHS Compliant & Halogen-Free S Description G AP10TN040 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology... See More ⇒

 7.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN040P

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒

 7.2. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN040P

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog... See More ⇒

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Detailed specifications: AP13N50R, AP10TN9R0P, AP10TN6R0P, AP10TN6R0I, AP10TN135P, AP10TN135JB, AP10TN135J, AP10TN135H, IRF830, AP10TN040H, AP10TN003S, AP10TN003R, AP10TN003P, AP10TN003I, AP10P230H, AP10P10GJ, AP10N9R0R

Keywords - AP10TN040P MOSFET specs

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