AP09T10GH Todos los transistores

 

AP09T10GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP09T10GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 12.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO252
 

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AP09T10GH Datasheet (PDF)

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 ap09t10gh.pdf pdf_icon

AP09T10GH

AP09T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching,

 0.1. Size:48K  ape
 ap09t10gh-hf.pdf pdf_icon

AP09T10GH

AP09T10GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provi

 6.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf pdf_icon

AP09T10GH

AP09T10GK-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theSThe Advanced Power MOSFETs from APEC provide the

 6.2. Size:165K  ape
 ap09t10gk.pdf pdf_icon

AP09T10GH

AP09T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin

MOSTRAR MÁS

Otros transistores... AP10N4R5S , AP10N4R5P , AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , IRF540 , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H .

History: QM4002D | DACMH40N1200

 

 
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