AP09T10GH - аналоги и даташиты транзистора

 

AP09T10GH - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP09T10GH
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 12.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4.4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3 Ohm
   Тип корпуса: TO252

 Аналог (замена) для AP09T10GH

 

AP09T10GH Datasheet (PDF)

 ..1. Size:194K  ape
 ap09t10gh.pdf pdf_icon

AP09T10GH

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 0.1. Size:48K  ape
 ap09t10gh-hf.pdf pdf_icon

AP09T10GH

AP09T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4A G Halogen Free & RoHS Compliant Product S Description Advanced Power MOSFETs from APEC provi

 6.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf pdf_icon

AP09T10GH

AP09T10GK-HF Preliminary Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4A G RoHS Compliant & Halogen-Free S D Description Advanced Power MOSFETs from APEC provide the designer with the S The Advanced Power MOSFETs from APEC provide the

 6.2. Size:165K  ape
 ap09t10gk.pdf pdf_icon

AP09T10GH

AP09T10GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1A G Halogen Free & RoHS Compliant Product S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin

ПОКАЗАТЬ ЕЩЁ

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History: AP05N20GI

 

 
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