All MOSFET. AP09T10GH Datasheet

 

AP09T10GH MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP09T10GH
   Marking Code: 09T10GH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 12.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.5 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO252

 AP09T10GH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP09T10GH Datasheet (PDF)

 ..1. Size:194K  ape
 ap09t10gh.pdf

AP09T10GH AP09T10GH

AP09T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching,

 0.1. Size:48K  ape
 ap09t10gh-hf.pdf

AP09T10GH AP09T10GH

AP09T10GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provi

 6.1. Size:38K  ape
 ap09t10gk-hf-pre.pdf

AP09T10GH AP09T10GH

AP09T10GK-HFPreliminaryAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Chage RDS(ON) 300m Fast Switching Characteristic ID 2.4AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide the designer with theSThe Advanced Power MOSFETs from APEC provide the

 6.2. Size:165K  ape
 ap09t10gk.pdf

AP09T10GH AP09T10GH

AP09T10GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 2.1AG Halogen Free & RoHS Compliant ProductSDescriptionDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switchin

 6.3. Size:48K  ape
 ap09t10gp-hf.pdf

AP09T10GH AP09T10GH

AP09T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 300m Fast Switching Characteristic ID 4.4AG Halogen Free & RoHS Compliant ProductSDescriptionAdvanced Power MOSFETs from APEC provi

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SI7960DP

 

 
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