AP05N50EJ Todos los transistores

 

AP05N50EJ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP05N50EJ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO251
 

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AP05N50EJ Datasheet (PDF)

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 ap05n50ej.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

 0.1. Size:63K  ape
 ap05n50eh-hf ap05n50ej-hf.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SThe AP05N50 provide high blocking voltage to overcome voltage surgeand sag in the to

 6.1. Size:59K  ape
 ap05n50ei-hf.pdf pdf_icon

AP05N50EJ

AP05N50EI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSDescriptionThe AP05N50 provide high blocking voltage to overcome voltage surgeGDand sag in the toughest power sys

 6.2. Size:196K  ape
 ap05n50eh.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500VD Fast Switching Characteristic RDS(ON) 1.6G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-FreeSGDescriptionDTO-252(H)SAP05N50E series are from Advanced Power innovated design andsilicon process technolo

MOSTRAR MÁS

Otros transistores... AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , IRFP460 , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H .

History: AP4501AGEM-HF | 2SK2100-01MR | LNG05R155 | LNC06R200 | LNG05R100 | VS5814DS | JFAM7N90C

 

 
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