AP05N50EJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP05N50EJ 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 75 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Encapsulados: TO251
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AP05N50EJ datasheet
ap05n50ej.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo
ap05n50eh-hf ap05n50ej-hf.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the to
ap05n50ei-hf.pdf
AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys
ap05n50eh.pdf
AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo
Otros transistores... AP10N012P, AP10N012IN, AP10N012I, AP10N012H, AP10C325Y, AP09T10GH, AP09N20BGH, AP0603GH, IRFP460, AP05N50EH, AP05N20GJ, AP05N20GI, AP05N20GH, AP04N70BS-H, AP02N90JB, AP02N90J, AP02N90H
History: AP2301AI | MTB23P06VT4 | SI6404DQ | IXTT10N100D2 | AP10N4R5S | AP4563GH | PDN4911S
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