AP05N50EJ - аналоги и даташиты транзистора

 

AP05N50EJ - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP05N50EJ
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 73.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 75 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.6 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP05N50EJ

 

AP05N50EJ Datasheet (PDF)

 ..1. Size:161K  ape
ap05n50ej.pdfpdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

 0.1. Size:63K  ape
ap05n50eh-hf ap05n50ej-hf.pdfpdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the to

 6.1. Size:59K  ape
ap05n50ei-hf.pdfpdf_icon

AP05N50EJ

AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys

 6.2. Size:196K  ape
ap05n50eh.pdfpdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo

Другие MOSFET... AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , IRFP460 , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H .

History: JMSH1565APS | TMD3N50AZ | AP09N70P-H-LF | H5N2802PF | JMSH1565AKSQ

 

 
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