AP05N50EJ PDF and Equivalents Search

 

AP05N50EJ Specs and Replacement

Type Designator: AP05N50EJ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 75 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO251

AP05N50EJ substitution

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AP05N50EJ datasheet

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 ap05n50ej.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo... See More ⇒

 0.1. Size:63K  ape
 ap05n50eh-hf ap05n50ej-hf.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S The AP05N50 provide high blocking voltage to overcome voltage surge and sag in the to... See More ⇒

 6.1. Size:59K  ape
 ap05n50ei-hf.pdf pdf_icon

AP05N50EJ

AP05N50EI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S Description The AP05N50 provide high blocking voltage to overcome voltage surge G D and sag in the toughest power sys... See More ⇒

 6.2. Size:196K  ape
 ap05n50eh.pdf pdf_icon

AP05N50EJ

AP05N50EH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 500V D Fast Switching Characteristic RDS(ON) 1.6 G Simple Drive Requirement ID 5A RoHS Compliant & Halogen-Free S G Description D TO-252(H) S AP05N50E series are from Advanced Power innovated design and silicon process technolo... See More ⇒

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Detailed specifications: AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , IRFP460 , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H .

Keywords - AP05N50EJ MOSFET specs

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