AP01L60T-H Todos los transistores

 

AP01L60T-H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01L60T-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 0.16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 13.5 Ohm
   Paquete / Cubierta: TO92
     - Selección de transistores por parámetros

 

AP01L60T-H Datasheet (PDF)

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 ap01l60t-h.pdf pdf_icon

AP01L60T-H

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan

 0.1. Size:86K  ape
 ap01l60t-h-hf.pdf pdf_icon

AP01L60T-H

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan

 0.2. Size:90K  ape
 ap01l60t-hf.pdf pdf_icon

AP01L60T-H

AP01L60T-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

 6.1. Size:92K  ape
 ap01l60t.pdf pdf_icon

AP01L60T-H

AP01L60TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effect

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSP65R260S2R | BUK9Y29-40E | BRFL70R360C | AUIRFP4468 | IXFP180N10T2 | IPF13N03LAG

 

 
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