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AP01L60T-H Spec and Replacement


   Type Designator: AP01L60T-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 0.16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 13.5 Ohm
   Package: TO92

 AP01L60T-H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP01L60T-H Specs

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AP01L60T-H

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

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AP01L60T-H

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan... See More ⇒

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AP01L60T-H

AP01L60T-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ... See More ⇒

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ap01l60t.pdf pdf_icon

AP01L60T-H

AP01L60T RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mA G S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effect... See More ⇒

Detailed specifications: AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , IRFB4227 , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF .

Keywords - AP01L60T-H MOSFET specs

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