AP01L60J-H Todos los transistores

 

AP01L60J-H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01L60J-H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 30.7 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 12 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP01L60J-H

 

Principales características: AP01L60J-H

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AP01L60J-H

AP01L60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G S Description The TO-252 package is universally preferred for all commercial-industrial G surface mount applications and suited for AC/DC converters. The D S TO

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AP01L60J-H

AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/

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AP01L60J-H

AP01L60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited

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 ap01l60t-h-hf.pdf pdf_icon

AP01L60J-H

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan

MOSTRAR MÁS

Otros transistores... AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , IRFB4115 , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF .

History: IRFD420 | R6006JNX | R6007JNJ

 

 
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