All MOSFET. AP01L60J-H Datasheet

 

AP01L60J-H Datasheet and Replacement


   Type Designator: AP01L60J-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 30.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
   Package: TO251
 

 AP01L60J-H substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP01L60J-H Datasheet (PDF)

 ..1. Size:62K  ape
 ap01l60h-h ap01l60j-h.pdf pdf_icon

AP01L60J-H

AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO

 5.1. Size:62K  ape
 ap01l60h-a-hf ap01l60j-a-hf.pdf pdf_icon

AP01L60J-H

AP01L60H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited for AC/

 6.1. Size:202K  ape
 ap01l60j.pdf pdf_icon

AP01L60J-H

AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited

 7.1. Size:86K  ape
 ap01l60t-h-hf.pdf pdf_icon

AP01L60J-H

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan

SHOW MORE

Datasheet: AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , IRFP250N , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF .

History: JMTC80N06A | STT01L07 | BR80N06 | IXFB40N110Q3 | VSP008N10MSC | AP01L60H-H | VS4620GI

Keywords - AP01L60J-H MOSFET datasheet

 AP01L60J-H cross reference
 AP01L60J-H equivalent finder
 AP01L60J-H lookup
 AP01L60J-H substitution
 AP01L60J-H replacement

 

 
Back to Top

 


 
.