AP01L60J-H Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP01L60J-H
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 30.7 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
Тип корпуса: TO251
Аналог (замена) для AP01L60J-H
AP01L60J-H Datasheet (PDF)
ap01l60h-h ap01l60j-h.pdf

AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO
ap01l60h-a-hf ap01l60j-a-hf.pdf

AP01L60H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited for AC/
ap01l60j.pdf

AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited
ap01l60t-h-hf.pdf

AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan
Другие MOSFET... AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , IRFP250N , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF .
History: JMTC80N06A
History: JMTC80N06A



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