AP01L60J-H - аналоги и даташиты транзистора

 

AP01L60J-H - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP01L60J-H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 30.7 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP01L60J-H

 

AP01L60J-H Datasheet (PDF)

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 ap01l60h-h ap01l60j-h.pdf pdf_icon

AP01L60J-H

AP01L60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G S Description The TO-252 package is universally preferred for all commercial-industrial G surface mount applications and suited for AC/DC converters. The D S TO

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 ap01l60h-a-hf ap01l60j-a-hf.pdf pdf_icon

AP01L60J-H

AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/

 6.1. Size:202K  ape
 ap01l60j.pdf pdf_icon

AP01L60J-H

AP01L60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited

 7.1. Size:86K  ape
 ap01l60t-h-hf.pdf pdf_icon

AP01L60J-H

AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP04N70BS-H , AP02N90JB , AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , IRFB4115 , AP01L60T-HF , AP01N40J , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF .

History: R6006JNX | IRFD420

 

 
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