AP01L60J-H MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP01L60J-H
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 29 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 1 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 30.7 pf
Сопротивление сток-исток открытого транзистора (Rds): 12 Ohm
Тип корпуса: TO251
Аналог (замена) для AP01L60J-H
AP01L60J-H Datasheet (PDF)
ap01l60h-h ap01l60j-h.pdf
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AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO
ap01l60h-a-hf ap01l60j-a-hf.pdf
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AP01L60H/J-A-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited for AC/
ap01l60j.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited
ap01l60t-h-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan
ap01l60at.pdf
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AP01L60ATRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient and cost-effe
ap01l60t.pdf
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AP01L60TRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAGSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely efficient andcost-effect
ap01l60hj-h-lf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60H/J-HRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700VD Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1AGSDescriptionThe TO-252 package is universally preferred for all commercial-industrialGsurface mount applications and suited for AC/DC converters. The DSTO
ap01l60t-h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60T-H-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 700VD Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistan
ap01l60t-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60T-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 160mAG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,
ap01l60h j-hf.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited
ap01l60h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AP01L60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for commercial-industrialGsurface mount applications and suited
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