AP01L60J-H datasheet, аналоги, основные параметры
Наименование производителя: AP01L60J-H 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 700 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5 ns
Cossⓘ - Выходная емкость: 30.7 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 12 Ohm
Тип корпуса: TO251
📄📄 Копировать
Аналог (замена) для AP01L60J-H
- подборⓘ MOSFET транзистора по параметрам
AP01L60J-H даташит
ap01l60h-h ap01l60j-h.pdf
AP01L60H/J-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 700V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G S Description The TO-252 package is universally preferred for all commercial-industrial G surface mount applications and suited for AC/DC converters. The D S TO
ap01l60h-a-hf ap01l60j-a-hf.pdf
AP01L60H/J-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 650V D Fast Switching Speed RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited for AC/
ap01l60j.pdf
AP01L60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 12 Simple Drive Requirement ID 1A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for commercial-industrial G surface mount applications and suited
ap01l60t-h-hf.pdf
AP01L60T-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 700V D Fast Switching Characteristics RDS(ON) 13.5 Simple Drive Requirement ID 160mA G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistan
Другие IGBT... AP04N70BS-H, AP02N90JB, AP02N90J, AP02N90H, AP01L60T-H, AP01L60H-A-HF, AP01L60H-H, AP01L60J-A-HF, IRFB4115, AP01L60T-HF, AP01N40J, AP02N60H-HF, AP02N60H-H-HF, AP02N60J-HF, AP02N60J-H-HF, AP02N60P, AP02N60P-HF
History: PB5A2BA
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet | k389 transistor











