AP01N40J Todos los transistores

 

AP01N40J MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP01N40J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 16 Ohm
   Paquete / Cubierta: TO251

 Búsqueda de reemplazo de MOSFET AP01N40J

 

Principales características: AP01N40J

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ap01n40j.pdf pdf_icon

AP01N40J

AP01N40J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig

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ap01n40g-hf.pdf pdf_icon

AP01N40J

AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device

 7.2. Size:57K  ape
ap01n40hj-hf.pdf pdf_icon

AP01N40J

AP01N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S RoHS Compliant & Halogen-Free Description G D AP01N40 series are from Advanced Power innovated design and TO-252(H) S sili

 9.1. Size:98K  ape
ap01n60hj-hf.pdf pdf_icon

AP01N40J

AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount ap

Otros transistores... AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF , P55NF06 , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , AP02N70EJ-HF , AP02N90I-HF .

History: TK6P53D | STW70N10F4 | AP02N60J-HF | TK8P25DA | SRC65R052FB | AP02N70EJ-HF

 

 
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