AP01N40J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP01N40J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 17.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 11 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 16 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET AP01N40J

AP01N40J Datasheet (PDF)

..1. Size:65K ape
ap01n40j.pdf

AP01N40JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desig

7.1. Size:56K ape
ap01n40g-hf.pdf

AP01N40G-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2AG Simple Drive RequirementSDDescriptionAdvanced Power MOSFETs from APEC provide the designer withSthe best combination of fast switching, ruggedized device

7.2. Size:57K ape
ap01n40hj-hf.pdf

AP01N40H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400VD 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5AG Simple Drive RequirementS RoHS Compliant & Halogen-FreeDescriptionGDAP01N40 series are from Advanced Power innovated design andTO-252(H)Ssili

9.1. Size:98K ape
ap01n60hj-hf.pdf

AP01N60H/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDSTO-252(H)surface mount ap

9.2. Size:60K ape
ap01n60p.pdf

AP01N60PPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Dynamic dv/dt Rating BVDSS 600V Repetitive Avalanche Rated RDS(ON) 8 Fast Switching ID 1.6A Simple Drive Requirement GDTO-220S RoHS CompliantDescriptionDThe TO-220 package is universally preferred for all commercial-industrial applications. The de

9.3. Size:196K ape
ap01n60j.pdf

AP01N60J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600VD Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-251(J)AP01N60 series are from Advanced Power innovated design andsilicon process technology

9.4. Size:90K ape
ap01n15gk-hf.pdf

AP01N15GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 2.6 Fast Switching Characteristic ID 700mAG Halogen Free & RoHS Compliant ProductSDDescriptionSAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switc

9.5. Size:583K ncepower
nceap01nd35ag.pdf

http://www.ncepower.com NCEAP01ND35AGNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEAP01ND35AG uses Super Trench technology that is V =100V,I =35ADS Duniquely optimized to provide the most efficient high frequency R =24m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =27m (typical) @ V =4.5VDS(ON) GSlo

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CS123 | FDS6690A

Liste

Recientemente añadidas las descripciónes de los transistores: