All MOSFET. AP01N40J Equivalents Search

 

AP01N40J Spec and Replacement


   Type Designator: AP01N40J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 17.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 16 Ohm
   Package: TO251

 AP01N40J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP01N40J Specs

 ..1. Size:65K  ape
ap01n40j.pdf pdf_icon

AP01N40J

AP01N40J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device desig... See More ⇒

 7.1. Size:56K  ape
ap01n40g-hf.pdf pdf_icon

AP01N40J

AP01N40G-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Test RDS(ON) 16 Fast Switching Performance ID 0.2A G Simple Drive Requirement S D Description Advanced Power MOSFETs from APEC provide the designer with S the best combination of fast switching, ruggedized device... See More ⇒

 7.2. Size:57K  ape
ap01n40hj-hf.pdf pdf_icon

AP01N40J

AP01N40H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 400V D 100% Avalanche Rated RDS(ON) 16 Fast Switching Performance ID 0.5A G Simple Drive Requirement S RoHS Compliant & Halogen-Free Description G D AP01N40 series are from Advanced Power innovated design and TO-252(H) S sili... See More ⇒

 9.1. Size:98K  ape
ap01n60hj-hf.pdf pdf_icon

AP01N40J

AP01N60H/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristics RDS(ON) 8 Simple Drive Requirement ID 1.6A G RoHS Compliant & Halogen-Free S Description G The TO-252 package is widely preferred for all commercial-industrial D S TO-252(H) surface mount ap... See More ⇒

Detailed specifications: AP02N90J , AP02N90H , AP01L60T-H , AP01L60H-A-HF , AP01L60H-H , AP01L60J-A-HF , AP01L60J-H , AP01L60T-HF , P55NF06 , AP02N60H-HF , AP02N60H-H-HF , AP02N60J-HF , AP02N60J-H-HF , AP02N60P , AP02N60P-HF , AP02N70EJ-HF , AP02N90I-HF .

History: MRF177M | IPP110N20NA

Keywords - AP01N40J MOSFET specs

 AP01N40J cross reference
 AP01N40J equivalent finder
 AP01N40J lookup
 AP01N40J substitution
 AP01N40J replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.