AP04N70BI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP04N70BI-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.3 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET AP04N70BI-HF
Principales características: AP04N70BI-HF
ap04n70bi-hf.pdf
AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
ap04n70bi-h.pdf
AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l
ap04n70bi-h-hf.pdf
AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D
ap04n70bi-a.pdf
AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan
Otros transistores... AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , 4435 , AP05FN50I , AP05FN50I-HF , AP05N50I-HF , AP0803GMT-A-HF , AP0904GP-HF , AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q
Popular searches
transistor a1015 datasheet | bf199 transistor equivalent | bu801 | c8550 transistor datasheet | mj21194 transistor datasheet | kep40n26 | nte103a | g011n04

