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AP04N70BI-HF Spec and Replacement


   Type Designator: AP04N70BI-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.3 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO220F

 AP04N70BI-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP04N70BI-HF Specs

 ..1. Size:70K  ape
ap04n70bi-hf.pdf pdf_icon

AP04N70BI-HF

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi... See More ⇒

 3.1. Size:224K  ape
ap04n70bi-h.pdf pdf_icon

AP04N70BI-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l... See More ⇒

 3.2. Size:108K  ape
ap04n70bi-h-hf.pdf pdf_icon

AP04N70BI-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ... See More ⇒

 4.1. Size:105K  ape
ap04n70bi-a.pdf pdf_icon

AP04N70BI-HF

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan... See More ⇒

Detailed specifications: AP02N90I-HF , AP03N70H-H-HF , AP03N70I-H-HF , AP03N70J-H-HF , AP0403GH , AP04N60I-HF , AP04N60J-HF , AP04N70BI-A-HF , 4435 , AP05FN50I , AP05FN50I-HF , AP05N50I-HF , AP0803GMT-A-HF , AP0904GP-HF , AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF .

History: IPP110N20NA | MRF177M

Keywords - AP04N70BI-HF MOSFET specs

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