AP04N70BI-HF datasheet, аналоги, основные параметры

Наименование производителя: AP04N70BI-HF  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 33 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.3 ns

Cossⓘ - Выходная емкость: 65 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm

Тип корпуса: TO220F

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Аналог (замена) для AP04N70BI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP04N70BI-HF даташит

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AP04N70BI-HF

AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

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ap04n70bi-h.pdfpdf_icon

AP04N70BI-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l

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ap04n70bi-h-hf.pdfpdf_icon

AP04N70BI-HF

AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

 4.1. Size:105K  ape
ap04n70bi-a.pdfpdf_icon

AP04N70BI-HF

AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan

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