AP04N70BI-HF datasheet, аналоги, основные параметры
Наименование производителя: AP04N70BI-HF 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 8.3 ns
Cossⓘ - Выходная емкость: 65 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 2.4 Ohm
Тип корпуса: TO220F
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Аналог (замена) для AP04N70BI-HF
- подборⓘ MOSFET транзистора по параметрам
AP04N70BI-HF даташит
ap04n70bi-hf.pdf
AP04N70BI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 600V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi
ap04n70bi-h.pdf
AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID4 4A G RoHS Compliant & Halogen-Free S Description AP04N70B series are from Advanced Power innovated design and silicon process technology to achieve the l
ap04n70bi-h-hf.pdf
AP04N70BI-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 700V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D
ap04n70bi-a.pdf
AP04N70BI-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D Fast Switching Characteristic RDS(ON) 2.4 Simple Drive Requirement ID 4A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistan
Другие IGBT... AP02N90I-HF, AP03N70H-H-HF, AP03N70I-H-HF, AP03N70J-H-HF, AP0403GH, AP04N60I-HF, AP04N60J-HF, AP04N70BI-A-HF, 4435, AP05FN50I, AP05FN50I-HF, AP05N50I-HF, AP0803GMT-A-HF, AP0904GP-HF, AP09N20BGS-HF, AP09N70P-A-HF, AP09N70P-H-LF
History: MRF148 | MSU7N60F | SI5913DC | MTB110P10L3
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