AP09N20BGS-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP09N20BGS-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 69 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7.8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de AP09N20BGS-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP09N20BGS-HF datasheet
ap09n20bgs-hf.pdf
AP09N20BGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the l
ap09n20bgh-hf.pdf
AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of f
ap09n20bgh.pdf
AP09N20BGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description AP09N20B series are from Advanced Power innovated design and G silicon process technology to achieve th
ap09n20bgp-hf.pdf
AP09N20BGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G T
Otros transistores... AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF , AP05FN50I , AP05FN50I-HF , AP05N50I-HF , AP0803GMT-A-HF , AP0904GP-HF , 12N60 , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A , AP10P10GK-HF , AP11N50I-HF .
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