All MOSFET. AP09N20BGS-HF Datasheet

 

AP09N20BGS-HF Datasheet and Replacement


   Type Designator: AP09N20BGS-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 69 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 7.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm
   Package: TO263
 

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AP09N20BGS-HF Datasheet (PDF)

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 ap09n20bgs-hf.pdf pdf_icon

AP09N20BGS-HF

AP09N20BGS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated designand silicon process technology to achieve the l

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 ap09n20bgh-hf.pdf pdf_icon

AP09N20BGS-HF

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide theGDSTO-252(H)designer with the best combination of f

 5.2. Size:230K  ape
 ap09n20bgh.pdf pdf_icon

AP09N20BGS-HF

AP09N20BGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAP09N20B series are from Advanced Power innovated design andGsilicon process technology to achieve th

 5.3. Size:58K  ape
 ap09n20bgp-hf.pdf pdf_icon

AP09N20BGS-HF

AP09N20BGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200VD Lower Gate Charge RDS(ON) 460m Fast Switching Characteristics ID 7.8A RoHS Compliant & Halogen-FreeGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GT

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Datasheet: AP04N60J-HF , AP04N70BI-A-HF , AP04N70BI-HF , AP05FN50I , AP05FN50I-HF , AP05N50I-HF , AP0803GMT-A-HF , AP0904GP-HF , 4N60 , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , AP10N70I-A , AP10P10GK-HF , AP11N50I-HF .

History: FMR19N60E | IRFP460P

Keywords - AP09N20BGS-HF MOSFET datasheet

 AP09N20BGS-HF cross reference
 AP09N20BGS-HF equivalent finder
 AP09N20BGS-HF lookup
 AP09N20BGS-HF substitution
 AP09N20BGS-HF replacement

 

 
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