AP10N70I-A Todos los transistores

 

AP10N70I-A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10N70I-A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.62 Ohm

Encapsulados: TO220F

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AP10N70I-A datasheet

 ..1. Size:127K  ape
ap10n70i-a.pdf pdf_icon

AP10N70I-A

AP10N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D TO-22

 0.1. Size:59K  ape
ap10n70i-a-hf.pdf pdf_icon

AP10N70I-A

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 7.1. Size:189K  ape
ap10n70p.pdf pdf_icon

AP10N70I-A

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati

 7.2. Size:172K  ape
ap10n70s.pdf pdf_icon

AP10N70I-A

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid

Otros transistores... AP0803GMT-A-HF , AP0904GP-HF , AP09N20BGS-HF , AP09N70P-A-HF , AP09N70P-H-LF , AP1003BST , AP1004CMX , AP1005BSQ , CS150N03A8 , AP10P10GK-HF , AP11N50I-HF , AP1203GH , AP1203GM , AP1333GU-HF , AP13N50W-HF , AP13P15GP , AP13P15GS .

 

 

 


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