AP10N70I-A PDF and Equivalents Search

 

AP10N70I-A Specs and Replacement

Type Designator: AP10N70I-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 630 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: TO220F

AP10N70I-A substitution

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AP10N70I-A datasheet

 ..1. Size:127K  ape
 ap10n70i-a.pdf pdf_icon

AP10N70I-A

AP10N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D TO-22... See More ⇒

 0.1. Size:59K  ape
 ap10n70i-a-hf.pdf pdf_icon

AP10N70I-A

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒

 7.1. Size:189K  ape
 ap10n70p.pdf pdf_icon

AP10N70I-A

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati... See More ⇒

 7.2. Size:172K  ape
 ap10n70s.pdf pdf_icon

AP10N70I-A

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid... See More ⇒

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Detailed specifications: AP0803GMT-A-HF, AP0904GP-HF, AP09N20BGS-HF, AP09N70P-A-HF, AP09N70P-H-LF, AP1003BST, AP1004CMX, AP1005BSQ, CS150N03A8, AP10P10GK-HF, AP11N50I-HF, AP1203GH, AP1203GM, AP1333GU-HF, AP13N50W-HF, AP13P15GP, AP13P15GS

Keywords - AP10N70I-A MOSFET specs

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