AP13P15GP Todos los transistores

 

AP13P15GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP13P15GP
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO220
 

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AP13P15GP Datasheet (PDF)

 ..1. Size:72K  ape
 ap13p15gp ap13p15gs.pdf pdf_icon

AP13P15GP

AP13P15GS/PPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDLower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGD

 6.1. Size:62K  ape
 ap13p15gs p-hf.pdf pdf_icon

AP13P15GP

AP13P15GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, ruggedized device design

 6.2. Size:100K  ape
 ap13p15gj-hf.pdf pdf_icon

AP13P15GP

AP13P15GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrialGDsurface mount application

 9.1. Size:1589K  cn apm
 ap13p06d.pdf pdf_icon

AP13P15GP

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS DR

MOSTRAR MÁS

Otros transistores... AP1005BSQ , AP10N70I-A , AP10P10GK-HF , AP11N50I-HF , AP1203GH , AP1203GM , AP1333GU-HF , AP13N50W-HF , CS150N03A8 , AP13P15GS , AP15N03GI , AP15N03GJ , AP15P10GP-HF , AP15P10GS-HF , AP15T03GJ , AP15T25H-HF , AP16N50P-HF .

History: JMSH1008AG

 

 
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