AP13P15GP PDF and Equivalents Search

 

AP13P15GP Specs and Replacement

Type Designator: AP13P15GP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO220

AP13P15GP substitution

- MOSFET ⓘ Cross-Reference Search

 

AP13P15GP datasheet

 ..1. Size:72K  ape
 ap13p15gp ap13p15gs.pdf pdf_icon

AP13P15GP

AP13P15GS/P Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G D... See More ⇒

 6.1. Size:62K  ape
 ap13p15gs p-hf.pdf pdf_icon

AP13P15GP

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design... See More ⇒

 6.2. Size:100K  ape
 ap13p15gj-hf.pdf pdf_icon

AP13P15GP

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application... See More ⇒

 9.1. Size:1589K  cn apm
 ap13p06d.pdf pdf_icon

AP13P15GP

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R ... See More ⇒

SHOW MORE

Detailed specifications: AP1005BSQ, AP10N70I-A, AP10P10GK-HF, AP11N50I-HF, AP1203GH, AP1203GM, AP1333GU-HF, AP13N50W-HF, BS170, AP13P15GS, AP15N03GI, AP15N03GJ, AP15P10GP-HF, AP15P10GS-HF, AP15T03GJ, AP15T25H-HF, AP16N50P-HF

Keywords - AP13P15GP MOSFET specs

 AP13P15GP cross reference

 AP13P15GP equivalent finder

 AP13P15GP pdf lookup

 AP13P15GP substitution

 AP13P15GP replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.