AP6679GP-A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6679GP-A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 65 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de AP6679GP-A MOSFET
- Selecciónⓘ de transistores por parámetros
AP6679GP-A datasheet
ap6679gp-a ap6679gs-a.pdf
AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-
ap6679gp-hf ap6679gs-hf.pdf
AP6679GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r
ap6679gp.pdf
AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi
ap6679gs.pdf
AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi
Otros transistores... AP18P10GJ-HF , AP18T10GH , AP18T10GJ , AP1A003GMT-HF , AP6679BGJ-HF , AP6679GH , AP6679GI , AP6679GJ , IRFB31N20D , AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , AP6681GMT-HF , AP20N15AGI-HF .
History: STF12N120K5 | FDBL9406F085 | CJE3134K
History: STF12N120K5 | FDBL9406F085 | CJE3134K
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