AP6679GP-A PDF and Equivalents Search

 

AP6679GP-A Specs and Replacement

Type Designator: AP6679GP-A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: TO220

AP6679GP-A substitution

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AP6679GP-A datasheet

 ..1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GP-A

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-... See More ⇒

 5.1. Size:97K  ape
 ap6679gp-hf ap6679gs-hf.pdf pdf_icon

AP6679GP-A

AP6679GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) r... See More ⇒

 6.1. Size:201K  ape
 ap6679gp.pdf pdf_icon

AP6679GP-A

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi... See More ⇒

 7.1. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GP-A

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi... See More ⇒

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Detailed specifications: AP18P10GJ-HF, AP18T10GH, AP18T10GJ, AP1A003GMT-HF, AP6679BGJ-HF, AP6679GH, AP6679GI, AP6679GJ, IRFB31N20D, AP6679GP-HF, AP6679GS, AP6679GS-A, AP6679GS-HF, AP6680AGM-HF, AP6680GM, AP6681GMT-HF, AP20N15AGI-HF

Keywords - AP6679GP-A MOSFET specs

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