AP6681GMT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP6681GMT-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 1060 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm
   Paquete / Cubierta: DFN5X6

Búsqueda de reemplazo de MOSFET AP6681GMT-HF

AP6681GMT-HF Datasheet (PDF)

..1. Size:93K ape
ap6681gmt-hf.pdf

AP6681GMT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS -30VD SO-8 Compatible RDS(ON) 3.1m Simple Drive Requirement ID -135AG RoHS Compliant & Halogen-FreeSDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching, ruggediz

9.1. Size:93K ape
ap6680bgm-hf.pdf

AP6680BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of f

9.2. Size:196K ape
ap6680agm.pdf

AP6680AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,Gruggedized device design, ultra

9.3. Size:59K ape
ap6680cgyt-hf.pdf

AP6680CGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680C series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest possible on-re

9.4. Size:60K ape
ap6680sgyt-hf.pdf

AP6680SGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Small Size & Lower Profile RDS(ON) 9mSchottky Diode RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680S series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p

9.5. Size:96K ape
ap6680bgyt-hf.pdf

AP6680BGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 16AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device desi

9.6. Size:94K ape
ap6680agm-hf.pdf

AP6680AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,

9.7. Size:93K ape
ap6683gyt-hf.pdf

AP6683GYT-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 10m RoHS Compliant & Halogen-Free ID -14.5AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with the Dbest combination of fast switching, ruggedized device desi

9.8. Size:81K ape
ap6680gm.pdf

AP6680GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLowOn-Resistance BVDSS 30V Low On-ResistanceLowOn-Resistance Low On-ResistanceDDHighVgsMaxRatingVoltage D RDS(ON) 11m High Vgs Max Rating VoltageHighVgsMaxRatingVoltage High Vgs Max Rating VoltageDSurfaceMountPackage ID 11.5A Surfa

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFN44N80Q3

Liste

Recientemente añadidas las descripciónes de los transistores: