AP6681GMT-HF Todos los transistores

 

AP6681GMT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6681GMT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 1060 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0031 Ohm

Encapsulados: DFN5X6

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AP6681GMT-HF datasheet

 ..1. Size:93K  ape
 ap6681gmt-hf.pdf pdf_icon

AP6681GMT-HF

AP6681GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -30V D SO-8 Compatible RDS(ON) 3.1m Simple Drive Requirement ID -135A G RoHS Compliant & Halogen-Free S D Description D D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggediz

 9.1. Size:93K  ape
 ap6680bgm-hf.pdf pdf_icon

AP6681GMT-HF

AP6680BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f

 9.2. Size:196K  ape
 ap6680agm.pdf pdf_icon

AP6681GMT-HF

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra

 9.3. Size:59K  ape
 ap6680cgyt-hf.pdf pdf_icon

AP6681GMT-HF

AP6680CGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G S D D Description D AP6680C series are from Advanced Power innovated design and silicon D process technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... AP6679GJ , AP6679GP-A , AP6679GP-HF , AP6679GS , AP6679GS-A , AP6679GS-HF , AP6680AGM-HF , AP6680GM , IRLB3034 , AP20N15AGI-HF , AP20P02GH , AP20P02GJ , AP20T15GM-HF , AP2301AGN , AP2301EN-HF , AP2301GN , AP2302GN .

History: STF12N120K5 | FDBL9406F085

 

 

 

 

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