AP6681GMT-HF PDF and Equivalents Search

 

AP6681GMT-HF Specs and Replacement

Type Designator: AP6681GMT-HF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 1060 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: DFN5X6

AP6681GMT-HF substitution

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AP6681GMT-HF datasheet

 ..1. Size:93K  ape
ap6681gmt-hf.pdf pdf_icon

AP6681GMT-HF

AP6681GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -30V D SO-8 Compatible RDS(ON) 3.1m Simple Drive Requirement ID -135A G RoHS Compliant & Halogen-Free S D Description D D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggediz... See More ⇒

 9.1. Size:93K  ape
ap6680bgm-hf.pdf pdf_icon

AP6681GMT-HF

AP6680BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f... See More ⇒

 9.2. Size:196K  ape
ap6680agm.pdf pdf_icon

AP6681GMT-HF

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra ... See More ⇒

 9.3. Size:59K  ape
ap6680cgyt-hf.pdf pdf_icon

AP6681GMT-HF

AP6680CGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G S D D Description D AP6680C series are from Advanced Power innovated design and silicon D process technology to achieve the lowest possible on-re... See More ⇒

Detailed specifications: AP6679GJ, AP6679GP-A, AP6679GP-HF, AP6679GS, AP6679GS-A, AP6679GS-HF, AP6680AGM-HF, AP6680GM, IRLB3034, AP20N15AGI-HF, AP20P02GH, AP20P02GJ, AP20T15GM-HF, AP2301AGN, AP2301EN-HF, AP2301GN, AP2302GN

Keywords - AP6681GMT-HF MOSFET specs

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