AP2R803GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP2R803GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 22.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 28 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET AP2R803GM-HF

AP2R803GM-HF Datasheet (PDF)

..1. Size:118K ape
ap2r803gm-hf.pdf

AP2R803GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 3.2mD Fast Switching Characteristic ID 22.8AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP2R803 series are from Advanced Power innovated design and siliconprocess tech

5.1. Size:59K ape
ap2r803gmt-hf.pdf

AP2R803GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105AG RoHS Compliant & Halogen-FreeSDDDDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

6.1. Size:93K ape
ap2r803gh.pdf

AP2R803GHRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with the bestGDcombination of fast switching, ruggedized device design, low on-resista

6.2. Size:137K ape
ap2r803gjb.pdf

AP2R803GJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75AG RoHS Compliant & Halogen-FreeSDescriptionAP2R803 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest p

6.3. Size:93K ape
ap2r803gh-hf.pdf

AP2R803GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching, rugg

6.4. Size:125K ape
ap2r803gs-hf.pdf

AP2R803GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedize

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