AP2R803GM-HF PDF and Equivalents Search

 

AP2R803GM-HF Specs and Replacement

Type Designator: AP2R803GM-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 22.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SO8

AP2R803GM-HF substitution

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AP2R803GM-HF datasheet

 ..1. Size:118K  ape
 ap2r803gm-hf.pdf pdf_icon

AP2R803GM-HF

AP2R803GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 3.2m D Fast Switching Characteristic ID 22.8A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP2R803 series are from Advanced Power innovated design and silicon process tech... See More ⇒

 5.1. Size:59K  ape
 ap2r803gmt-hf.pdf pdf_icon

AP2R803GM-HF

AP2R803GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible RDS(ON) 3m Low On-resistance ID 105A G RoHS Compliant & Halogen-Free S D D D D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒

 6.1. Size:93K  ape
 ap2r803gh.pdf pdf_icon

AP2R803GM-HF

AP2R803GH RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best G D combination of fast switching, ruggedized device design, low on-resista... See More ⇒

 6.2. Size:137K  ape
 ap2r803gjb.pdf pdf_icon

AP2R803GM-HF

AP2R803GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic ID3 75A G RoHS Compliant & Halogen-Free S Description AP2R803 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒

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Detailed specifications: AP2623GY-HF, AP2625GY-HF, AP2732GK-HF, AP2761I-A-HF, AP2762I-A, AP2764AP-A, AP2764I-A-HF, AP2R803GH, 7N65, AP2R803GS-HF, AP30P10GS-HF, AP3310GJ, AP3801GM-HF, AP3989I-HF, AP3R604GH, AP4002H-HF, AP4002J-HF

Keywords - AP2R803GM-HF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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