IRFI9540N Todos los transistores

 

IRFI9540N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFI9540N
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 54 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 67 nS
   Cossⓘ - Capacitancia de salida: 400 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.117 Ohm
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de MOSFET IRFI9540N

 

Principales características: IRFI9540N

 ..1. Size:145K  international rectifier
 irfi9540n.pdf pdf_icon

IRFI9540N

PD - 9.1487B IRFI9540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.117 P-Channel G Fully Avalanche Rated ID = -15A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve ext

 6.1. Size:284K  international rectifier
 irfi9540g.pdf pdf_icon

IRFI9540N

PD - 95609 IRFI9540GPbF Lead-Free 7/29/03 Document Number 91164 www.vishay.com 1 IRFI9540GPbF Document Number 91164 www.vishay.com 2 IRFI9540GPbF Document Number 91164 www.vishay.com 3 IRFI9540GPbF Document Number 91164 www.vishay.com 4 IRFI9540GPbF Document Number 91164 www.vishay.com 5 IRFI9540GPbF Document Number 91164 www.vishay.com 6 IRFI9540GPbF Peak

 6.2. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf pdf_icon

IRFI9540N

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

 6.3. Size:943K  vishay
 irfi9540g sihfi9540g.pdf pdf_icon

IRFI9540N

IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) ( )VGS = - 10 V 0.20 RoHS* Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT P-Channel Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Dynamic dV/dt

MOSTRAR MÁS

Otros transistores... IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , AOD4184A , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A .

 

 
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