IRFI9540N MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFI9540N
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 42 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.117 Ohm
Package: TO220
IRFI9540N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFI9540N 说明书
1.1. irfi9540n.pdf 
Size:145K _international_rectifier
PD - 9.1487B IRFI9540N PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology D Isolated Package VDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.117? P-Channel G Fully Avalanche Rated ID = -15A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely
2.1. irfi9540g.pdf Size:284K _international_rectifier
PD - 95609 IRFI9540GPbF • Lead-Free 7/29/03 Document Number: 91164 www.vishay.com 1 IRFI9540GPbF Document Number: 91164 www.vishay.com 2 IRFI9540GPbF Document Number: 91164 www.vishay.com 3 IRFI9540GPbF Document Number: 91164 www.vishay.com 4 IRFI9540GPbF Document Number: 91164 www.vishay.com 5 IRFI9540GPbF Document Number: 91164 www.vishay.com 6 IRFI9540GPbF Peak Diode
2.2. irfi9540g_sihfi9540g.pdf Size:943K _vishay
IRFI9540G, SiHFI9540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS (V) - 100 • High Voltage Isolation = 2.5 kVRMS (t = 60 s; Available f = 60 Hz) RDS(on) (?)VGS = - 10 V 0.20 RoHS* • Sink to Lead Creepage Dist. = 4.8 mm Qg (Max.) (nC) 61 COMPLIANT • P-Channel Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Dynamic dV/dt Configuration Si
Datasheet: IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , 2SK3562 , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A .
