All MOSFET. IRFI9540N Datasheet

 

IRFI9540N Datasheet and Replacement


   Type Designator: IRFI9540N
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
   Package: TO220F
 

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IRFI9540N Datasheet (PDF)

 ..1. Size:145K  international rectifier
 irfi9540n.pdf pdf_icon

IRFI9540N

PD - 9.1487BIRFI9540NPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyD Isolated PackageVDSS = -100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mmRDS(on) = 0.117 P-ChannelG Fully Avalanche RatedID = -15ADescriptionSFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveext

 6.1. Size:284K  international rectifier
 irfi9540g.pdf pdf_icon

IRFI9540N

PD - 95609IRFI9540GPbF Lead-Free7/29/03Document Number: 91164 www.vishay.com1IRFI9540GPbFDocument Number: 91164 www.vishay.com2IRFI9540GPbFDocument Number: 91164 www.vishay.com3IRFI9540GPbFDocument Number: 91164 www.vishay.com4IRFI9540GPbFDocument Number: 91164 www.vishay.com5IRFI9540GPbFDocument Number: 91164 www.vishay.com6IRFI9540GPbFPeak

 6.2. Size:944K  vishay
 irfi9540g-pbf sihfi9540g.pdf pdf_icon

IRFI9540N

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

 6.3. Size:943K  vishay
 irfi9540g sihfi9540g.pdf pdf_icon

IRFI9540N

IRFI9540G, SiHFI9540GVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) - 100 High Voltage Isolation = 2.5 kVRMS (t = 60 s;Availablef = 60 Hz)RDS(on) ()VGS = - 10 V 0.20RoHS* Sink to Lead Creepage Dist. = 4.8 mmQg (Max.) (nC) 61 COMPLIANT P-ChannelQgs (nC) 14 175 C Operating TemperatureQgd (nC) 29 Dynamic dV/dt

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Datasheet: IRFI820G , IRFI830A , IRFI830G , IRFI840A , IRFI840G , IRFI840GLC , IRFI9520N , IRFI9530G , AO4468 , IRFI9620G , IRFI9630G , IRFI9634G , IRFI9640G , IRFI9Z24N , IRFI9Z34N , IRFIB5N65A , IRFIB6N60A .

Keywords - IRFI9540N MOSFET datasheet

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