AP9997GK-HF Todos los transistores

 

AP9997GK-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP9997GK-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SOT223
 

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AP9997GK-HF Datasheet (PDF)

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 ap9997gk-hf.pdf pdf_icon

AP9997GK-HF

AP9997GK-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120mS Fast Switching Characteristic ID 3.2AD Halogen Free & RoHS Compliant ProductSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 6.1. Size:94K  ape
 ap9997gk.pdf pdf_icon

AP9997GK-HF

AP9997GKRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Glow on-resistance and co

 6.2. Size:812K  cn vbsemi
 ap9997gk.pdf pdf_icon

AP9997GK-HF

AP9997GKwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs1000.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSFET ABS

 7.1. Size:182K  ape
 ap9997gm.pdf pdf_icon

AP9997GK-HF

AP9997GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95VD2D2 Single Drive Requirement RDS(ON) 110mD1D1 Surface Mount Package ID 3AG2S2G1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best combination of fast switching,rugge

MOSTRAR MÁS

Otros transistores... AP4407GS-HF , AP4407S , AP4409AGEH-HF , AP4409AGEM-HF , AP4409AGM-HF , AP9990GI-HF , AP9994AGP-HF , AP9994GP-HF , STF13NM60N , AP9997GP , AP9998GI-HF , AP99LT06GI-HF , AP99LT06GP-HF , AP99LT06GS-HF , AP99T03GR-HF , AP9T15GH-HF , AP9T15GJ-HF .

History: SLP5N65S | BUZ72 | BRB100N03 | AP6P025H | CS9N65D | HY3704B | PZP003BYB

 

 
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