AP9997GK-HF Specs and Replacement

Type Designator: AP9997GK-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT223

AP9997GK-HF substitution

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AP9997GK-HF datasheet

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AP9997GK-HF

AP9997GK-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m S Fast Switching Characteristic ID 3.2A D Halogen Free & RoHS Compliant Product SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒

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AP9997GK-HF

AP9997GK RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Lower Gate Charge RDS(ON) 120m Fast Switching Characteristic ID 3.2A S D SOT-223 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and co... See More ⇒

 6.2. Size:812K  cn vbsemi
ap9997gk.pdf pdf_icon

AP9997GK-HF

AP9997GK www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET ABS... See More ⇒

 7.1. Size:182K  ape
ap9997gm.pdf pdf_icon

AP9997GK-HF

AP9997GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS 95V D2 D2 Single Drive Requirement RDS(ON) 110m D1 D1 Surface Mount Package ID 3A G2 S2 G1 S1 SO-8 Description Advanced Power MOSFETs from APEC provide the D2 D1 designer with the best combination of fast switching, rugge... See More ⇒

Detailed specifications: AP4407GS-HF, AP4407S, AP4409AGEH-HF, AP4409AGEM-HF, AP4409AGM-HF, AP9990GI-HF, AP9994AGP-HF, AP9994GP-HF, IRFP250, AP9997GP, AP9998GI-HF, AP99LT06GI-HF, AP99LT06GP-HF, AP99LT06GS-HF, AP99T03GR-HF, AP9T15GH-HF, AP9T15GJ-HF

Keywords - AP9997GK-HF MOSFET specs

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