AP9962GM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9962GM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.8 nS

Cossⓘ - Capacitancia de salida: 205 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SO8

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AP9962GM datasheet

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 ap9962gm.pdf pdf_icon

AP9962GM

AP9962GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 S2 G1 S1 SO-8 Description D2 Advanced Power MOSFETs from APEC provide the D1 designer with the best combination of fast switching, ruggedized device

 0.1. Size:89K  ape
 ap9962gma.pdf pdf_icon

AP9962GM

AP9962GMA Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20m D Fast Switching Speed ID 36A RoHS Compliant G S D Description The APAK-5 package is preferred for all commercial-industrial S surface mount applications and suited for low

 0.2. Size:210K  ape
 ap9962gm-hf.pdf pdf_icon

AP9962GM

AP9962GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D2 D2 Single Drive Requirement RDS(ON) 25m D1 D1 Surface Mount Package ID 7A G2 RoHS Compliant S2 G1 S1 SO-8 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching

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 ap9962gh ap9962gj.pdf pdf_icon

AP9962GM

AP9962GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 40V D Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-resistance an

MOSTRAR MÁS

Otros transistores... AP4511GED, AP4511GH-HF, AP4525GEH-HF, AP4533GEH-HF, AP4565GM, AP80T10AGP-HF, AP80T12GP-HF, AP9962AGH-HF, AOD4184A, AP9967GM-HF, AP9971AGH-HF, AP9971AGJ-HF, AP9971AGS-HF, AP9971GH-HF, AP9971GJ-HF, AP9974GS, AP9977AGH-HF