AP9962GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9962GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.8 nS
Cossⓘ - Capacitancia de salida: 205 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SO8
AP9962GM Datasheet (PDF)
ap9962gm.pdf

AP9962GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide theD1designer with the best combination of fast switching,ruggedized device
ap9962gma.pdf

AP9962GMAPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20mD Fast Switching Speed ID 36A RoHS CompliantGSDDescriptionThe APAK-5 package is preferred for all commercial-industrialSsurface mount applications and suited for low
ap9962gm-hf.pdf

AP9962GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2 RoHS CompliantS2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching
ap9962gh ap9962gj.pdf

AP9962GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resistance an
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: AP4451GYT-HF | IXTH10N60 | SIS413DN | 2N5163 | SRC60R145B | BF1205C | IRFU4510
History: AP4451GYT-HF | IXTH10N60 | SIS413DN | 2N5163 | SRC60R145B | BF1205C | IRFU4510



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