AP9962GM
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP9962GM
Marking Code: 9962GM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 25.8
nC
trⓘ - Rise Time: 6.8
nS
Cossⓘ -
Output Capacitance: 205
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025
Ohm
Package:
SO8
AP9962GM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP9962GM
Datasheet (PDF)
..1. Size:205K ape
ap9962gm.pdf
AP9962GMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2S2G1S1SO-8DescriptionD2Advanced Power MOSFETs from APEC provide theD1designer with the best combination of fast switching,ruggedized device
0.1. Size:89K ape
ap9962gma.pdf
AP9962GMAPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET SO-8 similar area footprint and pin assignment BVDSS 40V Low Gate Charge RDS(ON) 20mD Fast Switching Speed ID 36A RoHS CompliantGSDDescriptionThe APAK-5 package is preferred for all commercial-industrialSsurface mount applications and suited for low
0.2. Size:210K ape
ap9962gm-hf.pdf
AP9962GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD2D2 Single Drive Requirement RDS(ON) 25mD1D1 Surface Mount Package ID 7AG2 RoHS CompliantS2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching
7.1. Size:98K ape
ap9962gh ap9962gj.pdf
AP9962GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 40VD Single Drive Requirement RDS(ON) 20m Surface Mount Package ID 32AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device design, low on-resistance an
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