AP4816GSM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4816GSM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 320 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4816GSM MOSFET
AP4816GSM Datasheet (PDF)
ap4816gsm.pdf

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ap4813gyt-hf.pdf

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ap4810gsm.pdf

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ap4813gsm-hf.pdf

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Otros transistores... AP70T03GH-HF , AP70U02GH , AP72T03GJ-HF , AP72T03GP , AP75T10GS-HF , AP76T03AGMT-HF , AP7811GM , AP4800AGM , AON7408 , AP4835GM-HF , AP4880GEM , AP4953GM , AP4955GM-HF , AP4957AGM-HF , AP50T03GH , AP50T03GJ , AP5523GM-HF .



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